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Discrete Semiconductors
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IGBT
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ROHM Semiconductor (RSD050N10TL)
PartNo:
RSD050N10TL
Manufacturers:
ROHM Semiconductor
Qty:
1206
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Description:
MOSFET TRANS MOSFET N-CH 100V 5A 3PIN CPT
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Product Information:
RoHS:
Details
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
100 V
Vgs - Gate-Source Breakdown Voltage:
20 V
Id - Continuous Drain Current:
5 A
Rds On - Drain-Source Resistance:
145 mOhms
Configuration:
Single
Vgs th - Gate-Source Threshold Voltage:
1 V to 2.5 V
Qg - Gate Charge:
14 nC
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
15 W
Mounting Style:
SMD/SMT
Package / Case:
CPT-3
Packaging:
Reel
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IGBT 600V 107A 366W TO247
IKW08T120
IGBT 1200V 16A 70W TO247-3
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