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Discrete Semiconductors
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IGBT
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ROHM Semiconductor (RSH065N06TB1)
PartNo:
RSH065N06TB1
Manufacturers:
ROHM Semiconductor
Qty:
1461
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Description:
MOSFET Nch 60V 6.5A MOSFET
PDF:
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Product Information:
RoHS:
Details
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
60 V
Vgs - Gate-Source Breakdown Voltage:
Id - Continuous Drain Current:
6.5 A
Rds On - Drain-Source Resistance:
31 mOhms
Configuration:
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
2 W
Mounting Style:
SMD/SMT
Package / Case:
SOP-8
Packaging:
Reel
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IKW08T120
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