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Discrete Semiconductors
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IGBT
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Vishay / Siliconix (SIS862DN-T1-GE3)
PartNo:
SIS862DN-T1-GE3
Manufacturers:
Vishay / Siliconix
Qty:
6333
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Description:
MOSFET 60V 8.5mOhm@10V 40A N-Ch G-IV
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Product Information:
RoHS:
Details
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
60 V
Vgs - Gate-Source Breakdown Voltage:
20 V
Id - Continuous Drain Current:
40 A
Rds On - Drain-Source Resistance:
8.5 mOhms
Configuration:
Single
Vgs th - Gate-Source Threshold Voltage:
1.5 V to 2.6 V
Qg - Gate Charge:
8.7 nC
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
52 W
Mounting Style:
SMD/SMT
Package / Case:
PowerPAK 1212-8
Packaging:
Reel
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IGBT 1000V 34A 150W TO247AD
APT50GN60BDQ2G
IGBT 600V 107A 366W TO247
IKW08T120
IGBT 1200V 16A 70W TO247-3
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