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Discrete Semiconductors
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IGBT
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STMicroelectronics (STR2N2VH5)
PartNo:
STR2N2VH5
Manufacturers:
STMicroelectronics
Qty:
746
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Description:
MOSFET N-CH 20V 0.025Ohm 23A STripFET V
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Product Information:
RoHS:
Details
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
20 V
Vgs - Gate-Source Breakdown Voltage:
8 V
Id - Continuous Drain Current:
2.3 A
Rds On - Drain-Source Resistance:
30 mOhms
Configuration:
Single
Vgs th - Gate-Source Threshold Voltage:
0.7 V
Qg - Gate Charge:
6 nC
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
350 mW
Mounting Style:
SMD/SMT
Package / Case:
SOT-23-3
Packaging:
Reel
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RJH60F5DPK-00#T0
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APT50GN60BDQ2G
IGBT 600V 107A 366W TO247
IKW08T120
IGBT 1200V 16A 70W TO247-3
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