【TPS1120DR】PDF/Datasheet/Manufacturers,electronics components distributor

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PartNo:	TPS1120DR
Manufacturers:	N/A
Qty:	3347
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Description:	MOSFET Dual P-Ch Enh-Mode MOSFET
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Product Information:

RoHS:	Details
Transistor Polarity:	P-Channel
Vds - Drain-Source Breakdown Voltage:	15 V
Vgs - Gate-Source Breakdown Voltage:	- 15 V, 2 V
Id - Continuous Drain Current:	1.17 A
Rds On - Drain-Source Resistance:	180 mOhms
Configuration:	Dual Dual Drain
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:
Maximum Operating Temperature:	+ 125 C
Pd - Power Dissipation:	840 mW
Mounting Style:	SMD/SMT
Package / Case:	SOIC-8
Packaging:	Reel

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