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All Product >
Discrete Semiconductors
>
IGBT
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Supertex (VP2106N3-G)
PartNo:
VP2106N3-G
Manufacturers:
Supertex
Qty:
1921
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Description:
MOSFET 60V 12Ohm
PDF:
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Product Information:
RoHS:
Details
Transistor Polarity:
P-Channel
Vds - Drain-Source Breakdown Voltage:
- 60 V
Vgs - Gate-Source Breakdown Voltage:
20 V
Id - Continuous Drain Current:
- 250 mA
Rds On - Drain-Source Resistance:
12 Ohms
Configuration:
Single
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
740 mW
Mounting Style:
Through Hole
Package / Case:
TO-92-3
Packaging:
Bulk
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