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All Product >
Discrete Semiconductors
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IGBT
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Diodes Incorporated (ZVN2110ASTZ)
PartNo:
ZVN2110ASTZ
Manufacturers:
Diodes Incorporated
Qty:
1950
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Description:
MOSFET N-Chnl 100V
PDF:
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Product Information:
RoHS:
Details
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
100 V
Vgs - Gate-Source Breakdown Voltage:
20 V
Id - Continuous Drain Current:
320 mA
Rds On - Drain-Source Resistance:
4 Ohms
Configuration:
Single
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
700 mW
Mounting Style:
Through Hole
Package / Case:
TO-92-3
Packaging:
Bulk
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