【HN1C01FUGRLFT】PDF/Datasheet/Manufacturers,electronics components distributor

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All Product > Discrete Semiconductors > Transistors > Toshiba (HN1C01FUGRLFT)

PartNo:	HN1C01FUGRLFT
Manufacturers:	Toshiba
Qty:	1291
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Description:	Transistors Bipolar - BJT VCEO 50V IC 150mA HFE 120 - 400 150mA
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Product Information:

RoHS:	Details
Configuration:	Dual
Transistor Polarity:	NPN
Collector- Base Voltage VCBO:	60 V
Collector- Emitter Voltage VCEO Max:	50 V
Emitter- Base Voltage VEBO:	5 V
Collector-Emitter Saturation Voltage:	0.1 V
Maximum DC Collector Current:	150 mA
Gain Bandwidth Product fT:	80 MHz
Maximum Operating Temperature:	+ 125 C
Mounting Style:	SMD/SMT
Package / Case:	US-6 (SOT363-3)

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