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ROHM Semiconductor RGT8NS65DGTL
PartNo:

RGT8NS65DGTL
Manufacturers: ROHM Semiconductor
Qty: 1000
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Description: IGBT Transistors 650V 4A Field Stop Trench IGBT
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Product Information:
RoHS:Details
Configuration:
Collector- Emitter Voltage VCEO Max:650 V
Collector-Emitter Saturation Voltage:1.65 V
Maximum Gate Emitter Voltage:+/- 30 V
Continuous Collector Current at 25 C:8 A
Gate-Emitter Leakage Current:+/- 200 nA
Power Dissipation:65 W
Maximum Operating Temperature:+ 175 C
Package / Case:TO-263-3
Packaging:Reel
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