【SMUN5114T3G】PDF/Datasheet/Manufacturers,electronics components distributor

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All Product > Discrete Semiconductors > Transistors > ON Semiconductor (SMUN5114T3G)

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Product Information:

Minimum Quantity :	1
Packaging:	Cut Tape (CT) Alternate Packaging
Series:	-
Transistor Type:	NPN - Pre-Biased
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1) (Ohms):	10k
Resistor - Emitter Base (R2) (Ohms):	10k
DC Current Gain (hFE) (Min) @ Ic, Vce:	30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 500μA, 10mA
Current - Collector Cutoff (Max):	100nA (ICBO)
Frequency - Transition:	250MHz
Power - Max:	300mW
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package:	TO-92-3

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