Home
Tel: 86-755-83295289
Email:
mail@cxda.com
English
简体中文
한국어
About Us
All Product
Manufacturers
RFQ
Quality Control
News
Contact Us
PartNo
Keyword
Product Detail
All Product >
RF Semiconductors
>
RF Transistors
>
Cree, Inc. (CGHV60040D)
PartNo:
CGHV60040D
Manufacturers:
Cree, Inc.
Qty:
400
Request Qty:
Description:
Transistors RF JFET DC-6GHz 40W GaN 50Volt
PDF:
Quick Quotation
Company Name:
*
Contact Name:
*
Email:
*
Tel:
*
Request Qty:
*
*
Verification Code:
*
Product Information:
RoHS:
Details
Transistor Type:
HEMT
Technology:
GaN SiC
Frequency:
6 GHz
Gain:
18 dB
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
50 V
Vgs - Gate-Source Breakdown Voltage:
-
Id - Continuous Drain Current:
3.2 A
Output Power:
40 W
Maximum Drain Gate Voltage:
-
Maximum Operating Temperature:
-
Pd - Power Dissipation:
-
Mounting Style:
SMD/SMT
Package / Case:
Bare Die
Packaging:
Gel Pack
BAP64-04,215
PIN Diodes PIN 175V 100MA
MA4FCP200
PIN Diodes .1-40GHZz Cj=.02pF TL 100ns
MA4L011-134
PIN Diodes
MA4P606-131
PIN Diodes Vr=1000VDC Rs=.7 Ohm Cj=.6pF
MA4SPS502
PIN Diodes Vr=-275V Rs=3.2 Ohm Ct=.2pF Max.
CGHV60040D Related Product
CGHV96050F2
CGHV40030F
CGHV1J006D
CGHV60040D
CGHV60040D
CGHV40030F
CGHV1J006D
CGHV60040D
Electronic Components Distributor
Since 2000
©2001 - 2015 www.cxda.com all rights reservied.
FAQ
Product Index
Contact Us
Quality Control
RFQ
Manufacturers
About Us
Electronic Components Supplier |
China Electronic Components Manufacturer |
Electronic Components Distributor
粤ICP备15038990号