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CEL NE3509M04-T2-A
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NE3509M04-T2-A
Manufacturers: CEL
Qty: 1511
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Description: Transistors RF JFET L to S Band Lo Noise Amplifier N-Ch HJFET
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Product Information:
RoHS:Details
Transistor Type:HFET
Technology:GaAs
Frequency:2 GHz
Gain:17.5 dB
Transistor Polarity:N-Channel
Vds - Drain-Source Breakdown Voltage:4 V
Vgs - Gate-Source Breakdown Voltage:- 3 V
Id - Continuous Drain Current:60 mA
Output Power:
Maximum Drain Gate Voltage:
Maximum Operating Temperature:+ 150 C
Pd - Power Dissipation:150 mW
Mounting Style:SMD/SMT
Package / Case:FTSMM-4 (M04)
Packaging:Reel
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