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RF Semiconductors
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RF Transistors
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CEL (NE3515S02-T1C-A)
PartNo:
NE3515S02-T1C-A
Manufacturers:
CEL
Qty:
1898
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Description:
Transistors RF JFET Super Low Noise Pseudomorphic
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Product Information:
RoHS:
Details
Transistor Type:
pHEMT
Technology:
GaAs
Frequency:
12 GHz
Gain:
12.5 dB
Transistor Polarity:
Vds - Drain-Source Breakdown Voltage:
4 V
Vgs - Gate-Source Breakdown Voltage:
- 3 V
Id - Continuous Drain Current:
88 mA
Output Power:
Maximum Drain Gate Voltage:
Maximum Operating Temperature:
+ 125 C
Pd - Power Dissipation:
165 mW
Mounting Style:
SMD/SMT
Package / Case:
S0-2
Packaging:
Reel
BAP64-04,215
PIN Diodes PIN 175V 100MA
MA4FCP200
PIN Diodes .1-40GHZz Cj=.02pF TL 100ns
MA4L011-134
PIN Diodes
MA4P606-131
PIN Diodes Vr=1000VDC Rs=.7 Ohm Cj=.6pF
MA4SPS502
PIN Diodes Vr=-275V Rs=3.2 Ohm Ct=.2pF Max.
NE3515S02-T1C-A Related Product
NE3514S02-T1D、
NE3512S02
NE3509M04-T2
NE350184C
NE3560M06-T2
NE3512S02-T1D
NE3503-M04
NE3513M04-T2-A
NE3505M04
NE3503M04-T2B-A/JT
NE3508M04-T2-A
NE3508M04-T2-A
NE3512S02-T1C-A
NE3512S02-T1C-A
NE350184C-T1-A
NE350184C-T1A-A
NE3503M04-T2
NE3505M04-T2-A
NE3508M04-T2
NE3510M04-07-T2
NE3510M04-07-T2-A
NE3510M04-T2
NE3510M04-T2/NE3510M04-07-T2
NE3512S02-T1D-A
NE3512S02-T1D-A/JT
NE3514S02
NE3514S02-T1C
NE3514S02-T1D
NE3505M04-T2-A
NE3503M04-T2B
NE3509M04-T2-A
NE3512S02-T1D-A
NE3514S02-T1D
NE3508M04-T2-A
NE3503M04-T2
NE3505M04-T2
NE3512S02-T1D
NE3503M04-T2-A
NE3512S02-T1D-A/JT
NE3505M04-T2
NE3512S02-T1D
NE3503M04-T2-A
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