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NXP Semiconductors PSMN1R1-30EL,127
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PSMN1R1-30EL,127
Manufacturers: NXP Semiconductors
Qty: 1299
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Description: MOSFET N-Ch 30V 1.3 mOhms
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Product Information:
RoHS:Details
Transistor Polarity:N-Channel
Vds - Drain-Source Breakdown Voltage:30 V
Vgs - Gate-Source Breakdown Voltage:20 V
Id - Continuous Drain Current:120 A
Rds On - Drain-Source Resistance:1.3 mOhms
Configuration:
Vgs th - Gate-Source Threshold Voltage:1.7 V
Qg - Gate Charge:243 nC
Maximum Operating Temperature:+ 175 C
Pd - Power Dissipation:338 W
Mounting Style:Through Hole
Package / Case:I2PAK-3
Packaging:Tube
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