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Discrete Semiconductors
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IGBT
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Toshiba (TK10E60W,S1VX)
PartNo:
TK10E60W,S1VX
Manufacturers:
Toshiba
Qty:
462
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Description:
MOSFET N-Ch 9.7A 100W FET 600V 700pF 20nC
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Product Information:
RoHS:
Details
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
600 V
Vgs - Gate-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
9.7 A
Rds On - Drain-Source Resistance:
380 mOhms
Configuration:
Single
Vgs th - Gate-Source Threshold Voltage:
2.7 V to 3.7 V
Qg - Gate Charge:
20 nC
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
100 W
Mounting Style:
Through Hole
Package / Case:
TO-220-3
Packaging:
SLA5222
IGBT 600V 30A PFC
RJH60F5DPK-00#T0
IGBT 600V 80A 260.4W TO-3P
IXGH17N100AU1
IGBT 1000V 34A 150W TO247AD
APT50GN60BDQ2G
IGBT 600V 107A 366W TO247
IKW08T120
IGBT 1200V 16A 70W TO247-3
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