【RN2101(T5L,F,T)】PDF/Datasheet/Manufacturers,electronics components distributor

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All Product > Discrete Semiconductors > Transistors > Toshiba Semiconductor and Storage (RN2101(T5L,F,T))

PartNo:	RN2101(T5L,F,T)
Manufacturers:	Toshiba Semiconductor and Storage
Qty:	2768
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Description:	TRANS PREBIAS PNP 0.1W SSM
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Product Information:

Minimum Quantity :	1
Packaging:	Cut Tape (CT) Alternate Packaging
Series:	-
Transistor Type:	PNP - Pre-Biased
Current - Collector (Ic) (Max):	200mA
Voltage - Collector Emitter Breakdown (Max):	30V
Resistor - Base (R1) (Ohms):	1k
Resistor - Emitter Base (R2) (Ohms):	10k
DC Current Gain (hFE) (Min) @ Ic, Vce:	140 @ 100mA, 2V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max):	500nA
Frequency - Transition:	260MHz
Power - Max:	150mW
Mounting Type:	Surface Mount
Package / Case:	SOT-723
Supplier Device Package:	VMT3

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