【RN2311(TE85L,F)】PDF/Datasheet/Manufacturers,electronics components distributor

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All Product > Discrete Semiconductors > Transistors > Toshiba Semiconductor and Storage (RN2311(TE85L,F))

PartNo:	RN2311(TE85L,F)
Manufacturers:	Toshiba Semiconductor and Storage
Qty:	2650
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Description:	TRANS PREBIAS PNP 0.1W USM
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Product Information:

Minimum Quantity :	3,000
Packaging:	Tape & Reel (TR) Alternate Packaging
Series:	-
Transistor Type:	NPN - Pre-Biased
Current - Collector (Ic) (Max):	500mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1) (Ohms):	10k
Resistor - Emitter Base (R2) (Ohms):	10k
DC Current Gain (hFE) (Min) @ Ic, Vce:	56 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max):	500nA
Frequency - Transition:	200MHz
Power - Max:	200mW
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SMT3

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