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Discrete Semiconductors
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Diodes
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Toshiba (DF10G7M1N,LF)
PartNo:
DF10G7M1N,LF
Manufacturers:
Toshiba
Qty:
2980
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Description:
Arrays ESD 0.3pF 0.5uA 6V VBR 1mA Diode
PDF:
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Product Information:
RoHS:
Details
Polarity:
Channels:
1 Channel
Operating Voltage:
Clamping Voltage:
12 V
Breakdown Voltage:
6 V
Peak Surge Current:
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SIR494DP-T1-GE3
MOSFET 12V 60A 104W 1.2mohm @ 10V
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