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Discrete Semiconductors
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NXP Semiconductors (PMV56XN,215)
PartNo:
PMV56XN,215
Manufacturers:
NXP Semiconductors
Qty:
10201
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Description:
MOSFET LOW LEVEL FET
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Product Information:
RoHS:
Details
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
20 V
Vgs - Gate-Source Breakdown Voltage:
8 V
Id - Continuous Drain Current:
3.76 A
Rds On - Drain-Source Resistance:
56 mOhms
Configuration:
Single
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
1.92 W
Mounting Style:
SMD/SMT
Package / Case:
SOT-23-3
Packaging:
Reel
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SIR494DP-T1-GE3
MOSFET 12V 60A 104W 1.2mohm @ 10V
IRLU120NPBF
MOSFET MOSFT 100V 11A 185mOhm 13.3nC LogLv
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PMV56XN,215
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