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Toshiba Semiconductor and Storage TPN2010FNH,L1Q
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TPN2010FNH,L1Q
Manufacturers: Toshiba Semiconductor and Storage
Qty: 4513
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Description: MOSFET N-CH 250V 5.6A TSON
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Product Information:
Packaging:Cut Tape (CT) Alternate Packaging
Series:-
FET Type:MOSFET P-Channel, Metal Oxide
FET Feature:Standard
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:18A (Ta)
Rds On (Max) @ Id, Vgs:12 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) @ Vgs:38nC @ 10V
Input Capacitance (Ciss) @ Vds:1600pF @ 10V
Power - Max:27W
Mounting Type:Surface Mount
Package / Case:8-VDFN Exposed Pad
Supplier Device Package:8-TSON
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