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Toshiba Semiconductor and Storage (TK55S10N1,LQ)
PartNo:
TK55S10N1,LQ
Manufacturers:
Toshiba Semiconductor and Storage
Qty:
1618
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Description:
MOSFET N-CH 100V 55A DPAK
PDF:
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Product Information:
Packaging:
Tape & Reel (TR) Alternate Packaging
Series:
HEXFETR
FET Type:
MOSFET N-Channel, Metal Oxide
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
12V
Current - Continuous Drain (Id) @ 25°C:
84A (Tc)
Rds On (Max) @ Id, Vgs:
8.5 mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id:
1.9V @ 250μA
Gate Charge (Qg) @ Vgs:
41nC @ 5V
Input Capacitance (Ciss) @ Vds:
2490pF @ 6V
Power - Max:
88W
Mounting Type:
Surface Mount
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:
D-Pak
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