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Toshiba Semiconductor and Storage (TPN30008NH,LQ)
PartNo:
TPN30008NH,LQ
Manufacturers:
Toshiba Semiconductor and Storage
Qty:
488
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Description:
MOSFET N-CH 80V 9.6A 8TSON
PDF:
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Product Information:
Packaging:
Cut Tape (CT)
Series:
TrenchFETR
FET Type:
MOSFET N-Channel, Metal Oxide
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
100V
Current - Continuous Drain (Id) @ 25°C:
40A (Tc)
Rds On (Max) @ Id, Vgs:
25 mOhm @ 40A, 10V
Vgs(th) (Max) @ Id:
3V @ 250μA
Gate Charge (Qg) @ Vgs:
60nC @ 10V
Input Capacitance (Ciss) @ Vds:
2400pF @ 25V
Power - Max:
3W
Mounting Type:
Surface Mount
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:
TO-252, (D-Pak)
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