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Toshiba Semiconductor and Storage (TK100E08N1,S1X)
PartNo:
TK100E08N1,S1X
Manufacturers:
Toshiba Semiconductor and Storage
Qty:
483
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Description:
MOSFET N-CH 80V 100A TO220
PDF:
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Product Information:
Packaging:
Tube
Series:
PolarHV?
FET Type:
MOSFET N-Channel, Metal Oxide
FET Feature:
Standard
Drain to Source Voltage (Vdss):
600V
Current - Continuous Drain (Id) @ 25°C:
1.4A (Tc)
Rds On (Max) @ Id, Vgs:
9 Ohm @ 700mA, 10V
Vgs(th) (Max) @ Id:
5.5V @ 25μA
Gate Charge (Qg) @ Vgs:
5.2nC @ 10V
Input Capacitance (Ciss) @ Vds:
140pF @ 25V
Power - Max:
50W
Mounting Type:
Through Hole
Package / Case:
TO-220-3
Supplier Device Package:
TO-220AB
1N5822
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New and original,In stock
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New and original,In stock
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