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Toshiba Semiconductor and Storage (TK34E10N1,S1X)
PartNo:
TK34E10N1,S1X
Manufacturers:
Toshiba Semiconductor and Storage
Qty:
424
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Description:
MOSFET N-CH 100V 75A TO-220
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Product Information:
Packaging:
Cut Tape (CT) Alternate Packaging
Series:
-
FET Type:
MOSFET N-Channel, Metal Oxide
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
60V
Current - Continuous Drain (Id) @ 25°C:
9A (Ta)
Rds On (Max) @ Id, Vgs:
170 mOhm @ 4.5A, 5V
Vgs(th) (Max) @ Id:
2V @ 250μA
Gate Charge (Qg) @ Vgs:
10nC @ 5V
Input Capacitance (Ciss) @ Vds:
275pF @ 25V
Power - Max:
1.5W
Mounting Type:
Surface Mount
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:
DPAK-3
1N5822
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