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Toshiba Semiconductor and Storage (TK35E08N1,S1X)
PartNo:
TK35E08N1,S1X
Manufacturers:
Toshiba Semiconductor and Storage
Qty:
307
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Description:
MOSFET N-CH 80V 55A TO-220
PDF:
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Product Information:
Packaging:
cxda-ReelR Alternate Packaging
Series:
-
FET Type:
MOSFET N-Channel, Metal Oxide
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
1.5A (Ta)
Rds On (Max) @ Id, Vgs:
110 mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id:
3V @ 250μA
Gate Charge (Qg) @ Vgs:
7nC @ 10V
Input Capacitance (Ciss) @ Vds:
135pF @ 15V
Power - Max:
420mW
Mounting Type:
Surface Mount
Package / Case:
TO-236-3, SC-59, SOT-23-3
Supplier Device Package:
SOT-23-3 (TO-236)
1N5822
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TK35E08N1,S1X
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