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Toshiba Semiconductor and Storage TK31N60W,S1VF
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TK31N60W,S1VF
Manufacturers: Toshiba Semiconductor and Storage
Qty: 172
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Description: MOSFET N CH 600V 30.8A TO247
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Product Information:
Packaging:Tube
Series:-
FET Type:SiCFET N-Channel, Silicon Carbide
FET Feature:Standard
Drain to Source Voltage (Vdss):1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C:40A (Tc)
Rds On (Max) @ Id, Vgs:117 mOhm @ 10A, 18V
Vgs(th) (Max) @ Id:4V @ 4.4mA
Gate Charge (Qg) @ Vgs:106nC @ 18V
Input Capacitance (Ciss) @ Vds:1850pF @ 800V
Power - Max:179W
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:TO-247
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