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NXP Semiconductors PSMN7R0-30YL,115
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PSMN7R0-30YL,115

Manufacturers: NXP Semiconductors
Qty: 80623
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Description: MOSFET
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Product Information:

RoHS:Details
Transistor Polarity:N-Channel
Vds - Drain-Source Breakdown Voltage:30 V
Vgs - Gate-Source Breakdown Voltage:20 V
Id - Continuous Drain Current:76 A
Rds On - Drain-Source Resistance:7 mOhms
Configuration:Single Triple Source
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:
Maximum Operating Temperature:+ 175 C
Pd - Power Dissipation:51 W
Mounting Style:SMD/SMT
Package / Case:LFPAK-4
Packaging:Reel
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