【IRFHM8363TR2PBF】PDF/Datasheet/Manufacturers,electronics components distributor

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Product Information:

Manufacturer:	Infineon
Product Category:	MOSFET
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	PQFN-8
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	11 A
Rds On - Drain-Source Resistance:	16.3 mOhms
Vgs - Gate-Source Voltage:	20 V
Vgs th - Gate-Source Threshold Voltage:	1.8 V
Qg - Gate Charge:	15 nC
Maximum Operating Temperature:	+ 150 C
Packaging:	Reel
Configuration:	Dual
Fall Time:	33 ns
Forward Transconductance - Min:	20 S
Minimum Operating Temperature:	- 55 C
Pd - Power Dissipation:	2.7 W
Rise Time:	94 ns
Factory Pack Quantity:	400
Transistor Type:	2 N-Channel
Typical Turn-Off Delay Time:	12 ns
Typical Turn-On Delay Time:	14 ns