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Renesas Electronics America NP90N06VLG-E1-AY
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NP90N06VLG-E1-AY
Manufacturers: Renesas Electronics America
Qty: 2500
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Description: MOSFET N-CH 60V 90A TO-252
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Product Information:
Packaging:Cut Tape (CT)
Series:HEXFETR
FET Type:MOSFET N-Channel, Metal Oxide
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:13A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs:9 mOhm @ 13A, 10V
Vgs(th) (Max) @ Id:3V @ 250μA
Gate Charge (Qg) @ Vgs:24nC @ 4.5V
Input Capacitance (Ciss) @ Vds:2120pF @ 15V
Power - Max:2.1W
Mounting Type:Surface Mount
Package / Case:DirectFET? Isometric ST
Supplier Device Package:DIRECTFET? ST
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