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Vishay / Siliconix SIB452DK-T1-GE3
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SIB452DK-T1-GE3
Manufacturers: Vishay / Siliconix
Qty: 4969
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Description: MOSFET 190V 1.5A 13W 2.4ohm @ 4.5V
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Product Information:
RoHS:Details
Transistor Polarity:N-Channel
Vds - Drain-Source Breakdown Voltage:190 V
Vgs - Gate-Source Breakdown Voltage:16 V
Id - Continuous Drain Current:670 mA
Rds On - Drain-Source Resistance:2.4 Ohms
Configuration:Single Quad Drain Dual Source
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:
Maximum Operating Temperature:+ 150 C
Pd - Power Dissipation:2.4 W
Mounting Style:SMD/SMT
Package / Case:PowerPAK SC-75-6
Packaging:Reel
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