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Vishay / Siliconix SIB406EDK-T1-GE3
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SIB406EDK-T1-GE3
Manufacturers: Vishay / Siliconix
Qty: 2990
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Description: MOSFET 20V 6.0A 10W 46mohm @ 4.5V
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Product Information:
RoHS:Details
Transistor Polarity:N-Channel
Vds - Drain-Source Breakdown Voltage:20 V
Vgs - Gate-Source Breakdown Voltage:12 V
Id - Continuous Drain Current:5.1 A
Rds On - Drain-Source Resistance:46 mOhms
Configuration:Single Quad Drain
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:
Maximum Operating Temperature:+ 150 C
Pd - Power Dissipation:1.95 W
Mounting Style:SMD/SMT
Package / Case:SC-75-6
Packaging:Reel
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