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Discrete Semiconductors
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IGBT
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STMicroelectronics (STS8C5H30L)
PartNo:
STS8C5H30L
Manufacturers:
STMicroelectronics
Qty:
2049
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Description:
MOSFET N/P-Ch 30V 8/5 Amp
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Product Information:
RoHS:
Details
Transistor Polarity:
N and P-Channel
Vds - Drain-Source Breakdown Voltage:
30 V
Vgs - Gate-Source Breakdown Voltage:
16 V
Id - Continuous Drain Current:
8 A
Rds On - Drain-Source Resistance:
22 mOhms
Configuration:
Dual Dual Drain
Vgs th - Gate-Source Threshold Voltage:
2.5 V
Qg - Gate Charge:
7 nC
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
2 W
Mounting Style:
SMD/SMT
Package / Case:
SO-8
Packaging:
Reel
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RJH60F5DPK-00#T0
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IGBT 600V 107A 366W TO247
IKW08T120
IGBT 1200V 16A 70W TO247-3
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STS8C5H30L
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