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All Product >
Discrete Semiconductors
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IGBT
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Vishay Semiconductors (SQJ858AEP-T1-GE3)
PartNo:
SQJ858AEP-T1-GE3
Manufacturers:
Vishay Semiconductors
Qty:
1945
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Description:
MOSFET 40V 58A 48W
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Product Information:
RoHS:
Details
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
40 V
Vgs - Gate-Source Breakdown Voltage:
20 V
Id - Continuous Drain Current:
58 A
Rds On - Drain-Source Resistance:
6.3 mOhms
Configuration:
Single
Vgs th - Gate-Source Threshold Voltage:
2 V
Qg - Gate Charge:
36 nC
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
48 W
Mounting Style:
SMD/SMT
Package / Case:
PowerPAK SO-8
Packaging:
Reel
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RJH60F5DPK-00#T0
IGBT 600V 80A 260.4W TO-3P
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APT50GN60BDQ2G
IGBT 600V 107A 366W TO247
IKW08T120
IGBT 1200V 16A 70W TO247-3
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