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Toshiba TK8P60W,RVQ
PartNo:

TK8P60W,RVQ
Manufacturers: Toshiba
Qty: 1718
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Description: MOSFET DTMOSIV 600V 500mOhm 8A 80W 570pF 18.5nC
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Product Information:
RoHS:Details
Transistor Polarity:N-Channel
Vds - Drain-Source Breakdown Voltage:600 V
Vgs - Gate-Source Breakdown Voltage:30 V
Id - Continuous Drain Current:8 A
Rds On - Drain-Source Resistance:420 mOhms
Configuration:Single
Vgs th - Gate-Source Threshold Voltage:2.7 V to 3.7 V
Qg - Gate Charge:18.5 nC
Maximum Operating Temperature:+ 150 C
Pd - Power Dissipation:80 W
Mounting Style:SMD/SMT
Package / Case:DPAK-2
Packaging:Reel
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