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Discrete Semiconductors
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IGBT
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Toshiba (TK13A50DA(STA4,Q,M)
PartNo:
TK13A50DA(STA4,Q,M
Manufacturers:
Toshiba
Qty:
57
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Description:
MOSFET N-Ch MOS 13A 500V 45W 1550pF 0.47
PDF:
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Product Information:
RoHS:
Details
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
500 V
Vgs - Gate-Source Breakdown Voltage:
Id - Continuous Drain Current:
12.5 A
Rds On - Drain-Source Resistance:
390 mOhms
Configuration:
Vgs th - Gate-Source Threshold Voltage:
4 V
Qg - Gate Charge:
28 nC
Maximum Operating Temperature:
Pd - Power Dissipation:
45 W
Mounting Style:
Through Hole
Package / Case:
SC-67-3
Packaging:
SLA5222
IGBT 600V 30A PFC
RJH60F5DPK-00#T0
IGBT 600V 80A 260.4W TO-3P
IXGH17N100AU1
IGBT 1000V 34A 150W TO247AD
APT50GN60BDQ2G
IGBT 600V 107A 366W TO247
IKW08T120
IGBT 1200V 16A 70W TO247-3
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