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Infineon Technologies (BFR840L3RHESDE6327XTSA1)
PartNo:
BFR840L3RHESDE6327XTSA1
Manufacturers:
Infineon Technologies
Qty:
39085
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Description:
Transistors RF Bipolar RF BIP TRANSISTORS
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Product Information:
RoHS:
Details
Transistor Type:
Bipolar
Technology:
SiGe
Transistor Polarity:
Frequency:
75 GHz
DC Collector/Base Gain hfe Min:
Collector- Emitter Voltage VCEO Max:
2.25 V
Emitter- Base Voltage VEBO:
2.9 V
Continuous Collector Current:
35 mA
Maximum Operating Temperature:
+ 150 C
Configuration:
Single
Power Dissipation:
75 mW
Mounting Style:
SMD/SMT
Package / Case:
TSLP-3-9-3
Packaging:
Reel
BAP64-04,215
PIN Diodes PIN 175V 100MA
MA4FCP200
PIN Diodes .1-40GHZz Cj=.02pF TL 100ns
MA4L011-134
PIN Diodes
MA4P606-131
PIN Diodes Vr=1000VDC Rs=.7 Ohm Cj=.6pF
MA4SPS502
PIN Diodes Vr=-275V Rs=3.2 Ohm Ct=.2pF Max.
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