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Toshiba Semiconductor and Storage (HN3C10FUTE85LF)
PartNo:
HN3C10FUTE85LF
Manufacturers:
Toshiba Semiconductor and Storage
Qty:
2971
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Description:
TRANSISTOR NPN US6
PDF:
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Product Information:
Minimum Quantity :
1
Packaging:
Cut Tape (CT) Alternate Packaging
Series:
-
Transistor Type:
2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max):
12V
Frequency - Transition:
7GHz
Noise Figure (dB Typ @ f):
1.1dB @ 1GHz
Gain:
11.5dB
Power - Max:
200mW
DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 20mA, 10V
Current - Collector (Ic) (Max):
80mA
Mounting Type:
Surface Mount
Package / Case:
6-TSSOP, SC-88, SOT-363
Supplier Device Package:
US6
BAP64-04,215
PIN Diodes PIN 175V 100MA
MA4FCP200
PIN Diodes .1-40GHZz Cj=.02pF TL 100ns
MA4L011-134
PIN Diodes
MA4P606-131
PIN Diodes Vr=1000VDC Rs=.7 Ohm Cj=.6pF
MA4SPS502
PIN Diodes Vr=-275V Rs=3.2 Ohm Ct=.2pF Max.
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