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STMicroelectronics (STQ1HN60K3-AP)
PartNo:
STQ1HN60K3-AP
Manufacturers:
STMicroelectronics
Qty:
1612
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Description:
MOSFET N-Ch 600V 6.4 Ohm 1.2A SuperMESH3 FET
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Product Information:
RoHS:
Details
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
600 V
Vgs - Gate-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
400 mA
Rds On - Drain-Source Resistance:
6.7 Ohms
Configuration:
Single
Vgs th - Gate-Source Threshold Voltage:
3.75 V
Qg - Gate Charge:
9.5 nC
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
3 W
Mounting Style:
Through Hole
Package / Case:
TO-92-3
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Ammo Pack
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