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Infineon Technologies (BSR302N L6327)
PartNo:
BSR302N L6327
Manufacturers:
Infineon Technologies
Qty:
1296
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Description:
MOSFET OptiMOS 2 Sm-Signal Transistor 30V 3.7A
PDF:
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Product Information:
RoHS:
Details
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
30 V
Vgs - Gate-Source Breakdown Voltage:
20 V
Id - Continuous Drain Current:
3.7 A
Rds On - Drain-Source Resistance:
23 mOhms
Configuration:
Single
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
500 mW
Mounting Style:
SMD/SMT
Package / Case:
SOT-23-3
Packaging:
Reel
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SI1913DH-T1-E3
MOSFET DUAL P-CH 20V (D-S)
SIR494DP-T1-GE3
MOSFET 12V 60A 104W 1.2mohm @ 10V
IRLU120NPBF
MOSFET MOSFT 100V 11A 185mOhm 13.3nC LogLv
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