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Discrete Semiconductors
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ON Semiconductor (NDD03N50Z-1G)
PartNo:
NDD03N50Z-1G
Manufacturers:
ON Semiconductor
Qty:
999
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Description:
MOSFET 500V 2.6A HVFET IPAK
PDF:
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Product Information:
RoHS:
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
500 V
Vgs - Gate-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
2.6 A
Rds On - Drain-Source Resistance:
3.3 Ohms
Configuration:
Single
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
58 W
Mounting Style:
Through Hole
Package / Case:
IPAK-3
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