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STMicroelectronics STH110N10F7-2
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STH110N10F7-2
Manufacturers: STMicroelectronics
Qty: 629
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Description: MOSFET N-Ch 100V 6mOhm 110A STripFET VII
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Product Information:
RoHS:Details
Transistor Polarity:N-Channel
Vds - Drain-Source Breakdown Voltage:100 V
Vgs - Gate-Source Breakdown Voltage:20 V
Id - Continuous Drain Current:110 A
Rds On - Drain-Source Resistance:6.5 mOhms
Configuration:Single
Vgs th - Gate-Source Threshold Voltage:2 V to 4 V
Qg - Gate Charge:60 nC
Maximum Operating Temperature:+ 175 C
Pd - Power Dissipation:150 W
Mounting Style:SMD/SMT
Package / Case:H2PAK-2
Packaging:Reel
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