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Vishay / Siliconix SiHB12N60E-GE3
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SiHB12N60E-GE3
Manufacturers: Vishay / Siliconix
Qty: 597
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Description: MOSFET 600V 380mOhm@10V 12A N-Ch E-SRS
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Product Information:
RoHS:Details
Transistor Polarity:N-Channel
Vds - Drain-Source Breakdown Voltage:600 V
Vgs - Gate-Source Breakdown Voltage:20 V
Id - Continuous Drain Current:12 A
Rds On - Drain-Source Resistance:380 mOhms
Configuration:Single
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:58 nC
Maximum Operating Temperature:+ 150 C
Pd - Power Dissipation:147 W
Mounting Style:SMD/SMT
Package / Case:D2PAK-2
Packaging:Tube
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