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Discrete Semiconductors
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Toshiba (TK39J60W,S1VQ)
PartNo:
TK39J60W,S1VQ
Manufacturers:
Toshiba
Qty:
523
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Description:
MOSFET N-Ch 38.8A 270W FET 600V 4100pF 110nC
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Product Information:
RoHS:
Details
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
600 V
Vgs - Gate-Source Breakdown Voltage:
10 V
Id - Continuous Drain Current:
38.8 A
Rds On - Drain-Source Resistance:
65 mOhms
Configuration:
Single
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:
135 nC
Maximum Operating Temperature:
Pd - Power Dissipation:
270 W
Mounting Style:
Through Hole
Package / Case:
TO-3P-3
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MOSFET 12V 60A 104W 1.2mohm @ 10V
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