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Toshiba Semiconductor and Storage (TK39N60X,S1F)
PartNo:
TK39N60X,S1F
Manufacturers:
Toshiba Semiconductor and Storage
Qty:
127
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Description:
MOSFET N-CH 600V 38.8A TO-247
PDF:
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Product Information:
Packaging:
Cut Tape (CT)
Series:
-
FET Type:
MOSFET N-Channel, Metal Oxide
FET Feature:
Standard
Drain to Source Voltage (Vdss):
100V
Current - Continuous Drain (Id) @ 25°C:
2.4A (Ta)
Rds On (Max) @ Id, Vgs:
350 mOhm @ 2.6A, 10V
Vgs(th) (Max) @ Id:
4V @ 250μA
Gate Charge (Qg) @ Vgs:
5.4nC @ 10V
Input Capacitance (Ciss) @ Vds:
274pF @ 50V
Power - Max:
2.11W
Mounting Type:
Surface Mount
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:
TO-252-3
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