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Discrete Semiconductors
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Infineon Technologies (IPI60R380C6)
PartNo:
IPI60R380C6
Manufacturers:
Infineon Technologies
Qty:
490
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Description:
MOSFET 600V CoolMOSC8 Power Transistor
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Product Information:
RoHS:
Details
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
650 V
Vgs - Gate-Source Breakdown Voltage:
20 V
Id - Continuous Drain Current:
10.6 A
Rds On - Drain-Source Resistance:
380 mOhms
Configuration:
Single
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:
32 nC
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
83 W
Mounting Style:
Through Hole
Package / Case:
I2PAK-3
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Tube
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