【DMG9N65CT】PDF/Datasheet/Manufacturers,electronics components distributor

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All Product > Discrete Semiconductors > Diodes > Diodes Incorporated (DMG9N65CT)

PartNo:	DMG9N65CT
Manufacturers:	Diodes Incorporated
Qty:	485
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Description:	MOSFET N-Ch Enh Mode FET 650V 10V VGS 9.0A
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Product Information:

RoHS:	Details
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Vgs - Gate-Source Breakdown Voltage:
Id - Continuous Drain Current:	9 A
Rds On - Drain-Source Resistance:	1.3 Ohms
Configuration:	Single
Vgs th - Gate-Source Threshold Voltage:	5 V
Qg - Gate Charge:	39 nC
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	3.15 W
Mounting Style:	Through Hole
Package / Case:	TO-220-3
Packaging:	Reel

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