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Discrete Semiconductors
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Fairchild Semiconductor (FQA10N80C_F109)
PartNo:
FQA10N80C_F109
Manufacturers:
Fairchild Semiconductor
Qty:
180
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Description:
MOSFET 800V N-Ch QFET Advance
PDF:
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Product Information:
RoHS:
Details
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
800 V
Vgs - Gate-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
10 A
Rds On - Drain-Source Resistance:
1.1 Ohms
Configuration:
Single
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
240 W
Mounting Style:
Through Hole
Package / Case:
TO-3PN-3
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Tube
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MOSFET MOSFT 100V 11A 185mOhm 13.3nC LogLv
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