【NTD6416AN-1G】PDF/Datasheet/Manufacturers,electronics components distributor

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Product Information:

RoHS:	Details
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Vgs - Gate-Source Breakdown Voltage:	20 V
Id - Continuous Drain Current:	17 A
Rds On - Drain-Source Resistance:	73 mOhms
Configuration:	Single
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:	20 nC
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	71 W
Mounting Style:	Through Hole
Package / Case:	IPAK-3
Packaging:

MOSFET AUTO -55V 1 N-CH HEXFET 105mOhms

MOSFET N-Ch 650V .0308 Ohm 11A MDmesh V MOS

MOSFET DUAL P-CH 20V (D-S)

MOSFET 12V 60A 104W 1.2mohm @ 10V

MOSFET MOSFT 100V 11A 185mOhm 13.3nC LogLv