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Discrete Semiconductors
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Fairchild Semiconductor (FQU10N20CTU)
PartNo:
FQU10N20CTU
Manufacturers:
Fairchild Semiconductor
Qty:
4688
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Description:
MOSFET N-CH/200V/10A/QFET
PDF:
Quick Quotation
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Product Information:
RoHS:
Details
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
200 V
Vgs - Gate-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
7.8 A
Rds On - Drain-Source Resistance:
360 mOhms
Configuration:
Single
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
50 W
Mounting Style:
Through Hole
Package / Case:
IPAK-3
Packaging:
Tube
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SIR494DP-T1-GE3
MOSFET 12V 60A 104W 1.2mohm @ 10V
IRLU120NPBF
MOSFET MOSFT 100V 11A 185mOhm 13.3nC LogLv
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