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Vishay / Siliconix SQS460EN-T1-GE3
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SQS460EN-T1-GE3
Manufacturers: Vishay / Siliconix
Qty: 2711
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Description: MOSFET 60V 8A 39W
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Product Information:
RoHS:Details
Transistor Polarity:N-Channel
Vds - Drain-Source Breakdown Voltage:60 V
Vgs - Gate-Source Breakdown Voltage:20 V
Id - Continuous Drain Current:8 A
Rds On - Drain-Source Resistance:30 mOhms
Configuration:Single
Vgs th - Gate-Source Threshold Voltage:2.5 V
Qg - Gate Charge:13 nC
Maximum Operating Temperature:+ 175 C
Pd - Power Dissipation:39 W
Mounting Style:SMD/SMT
Package / Case:PowerPAK 1212-8
Packaging:Reel
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